emitter region मीनिंग इन हिंदी

Typically, the emitter region is heavily doped compared to the other two layers, whereas the majority charge carrier concentrations in base and collector layers are about the same.
The effect is to limit the injection of holes from the base into the emitter region, since the potential barrier in the valence band is higher than in the conduction band.
In an MCS the positive difference between the voltage of regulation element and conduction voltage drop of MOSFET is applied to location between the collector region and emitter region of the pnp transistor.
The collector surrounds the emitter region, making it almost impossible for the electrons injected into the base region to escape without being collected, thus making the resulting value of ? very close to unity, and so, giving the transistor a large ?.
In the active mode of operation, electrons are injected from the forward biased n-type emitter region into the p-type base where they diffuse as minority carriers to the reverse-biased n-type collector and are swept away by the electric field in the reverse-biased collector base junction.